제조사:
-
간단한 설명:
CIG18DCT VISHAY TO-220
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
2.2µH Shielded Multilayer Inductor 800mA 250 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
4.7µH Shielded Multilayer Inductor 580mA 433 mOhm 0805 (2012 Metric)
제조사:
-
간단한 설명:
CIG21F1R0MNC SAMSUNG SMD
제조사:
-
간단한 설명:
CIG21F1R5MNC SAMSUNG SMD
제조사:
-
간단한 설명:
CIG21F2R2MNC Samsung SMD or Through Hole
제조사:
-
간단한 설명:
CIG21FR47MNC Samsung SMD
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
1µH Shielded Multilayer Inductor 1.15A 110 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
1.2µH Shielded Multilayer Inductor 1.1A 125 mOhm 0805 (2012 Metric)
제조사:
-
간단한 설명:
CIG21L1R5MNC Samsung SMD or Through Hole
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
1.5µH Shielded Multilayer Inductor 1.05A 140 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
2.2µH Shielded Multilayer Inductor 950mA 160 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
3.3µH Shielded Multilayer Inductor 800mA 220 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
4.7µH Shielded Multilayer Inductor 750mA 260 mOhm 0805 (2012 Metric)
제조사:
-
간단한 설명:
CIG21LR47MNC Samsung SMD or Through Hole
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
470nH Shielded Multilayer Inductor 1.3A 80 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
1µH Shielded Multilayer Inductor 1.05A 133 mOhm 0805 (2012 Metric)
제조사:
-
간단한 설명:
CIG21W1R5MNC Samsung SMD or Through Hole
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
1.5µH Shielded Multilayer Inductor 960mA 150 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
2.2µH Shielded Multilayer Inductor 810mA 200 mOhm 0805 (2012 Metric)
제조사:
Samsung Electro-Mechanics America, Inc.
간단한 설명:
3.3µH Shielded Multilayer Inductor 730mA 250 mOhm 0805 (2012 Metric)